Samsung Mass-Producing 4GB Flash Device
May 30, 2005
Seoul, Korea - Chosun Ilbo, Korea’s largest newspaper, reported today that Samsung Electronics will soon start mass-production of 4GB NAND flash memory using 70-nanometer technology, using its new production line for 300 mm wafers.
The 4GB NAND flash, which the paper says has the highest density in the market, uses SLC (single level cells) measuring 0.025 square micrometers, the smallest in the business.
Samsung recently began producing 2GB, 90-nanometer flash memory on its new 300 mm wafer production line. Chosun Ilbo said that the company will start manufacturing the new 4Gb 70-nanometer devices next month.
According to the report, Samsung’s 300 mm wafers are 2.25 times more productive than the former 200 mm types, and 70-nanometer technology has a 65 percent advantage over 90-nanometer technology.
It also said that NAND flash is the most popular digital storage for mobile devices such as cell phones, MP3 players, digital cameras, memory cards, USB memory and game systems. This year the market is expected to be worth $8 billion, growing to $13 billion by 2008.
According to Dataquest, Samsung Electronics held a leading 44.4 percent share of the NAND flash market in 2002, and 54 percent last year.
For more information, visit:
http://english.chosun.com
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